? semiconductor components industries, llc, 2006 january, 2006 ? rev. 3 1 publication order number: NTMS4N01R2/d NTMS4N01R2 power mosfet 4.2 amps, 20 volts n?channel enhancement?mode single so?8 package features ? high density power mosfet with ultra low r ds(on) providing higher efficiency ? miniature so?8 surface mount package saving board space; mounting information for th e so?8 package is provided ? i dss specified at elevated temperature ? drain?to?source avalanche energy specified ? diode exhibits high speed, soft recovery ? pb?free package is available applications ? power management in portable and battery?powered products, i.e.: computers, printers, pcmcia cards, cellular & cordless telephones maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain?to?source voltage v dss 20 v drain?to?gate voltage (r gs = 1.0 m ) v dgr 20 v gate?to?source voltage ? continuous v gs 10 v thermal resistance, junction?to?ambient (note 1) total power dissipation @ t a = 25 c continuous drain current @ 25 c continuous drain current @ 70 c pulsed drain current (note 4) r ja p d i d i d i dm 50 2.5 5.9 4.7 25 c/w w a a a thermal resistance, junction?to?ambient (note 2) total power dissipation @ t a = 25 c continuous drain current @ 25 c continuous drain current @ 70 c pulsed drain current (note 4) r ja p d i d i d i dm 100 1.25 4.2 3.3 20 c/w w a a a thermal resistance, junction?to?ambient (note 3) total power dissipation @ t a = 25 c continuous drain current @ 25 c continuous drain current @ 70 c pulsed drain current (note 4) r ja p d i d i d i dm 162 0.77 3.3 2.6 15 c/w w a a a operating and storage temperature range t j , t stg ?55 to +150 c single pulse drain?to?source avalanche energy ? starting t j = 25 c (v dd = 20 vdc, v gs = 5.0 vdc, peak i l = 7.5 apk, l = 6 mh, r g = 25 ) e as 169 mj maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. mounted onto a 2 square fr?4 board (1 sq. 2 oz cu 0.06 thick single sided), t 10 seconds. 2. mounted onto a 2 square fr?4 board (1 sq. 2 oz cu 0.06 thick single sided), t = steady state. 3. minimum fr?4 or g?10 pcb, t = steady state. 4. pulse test: pulse width = 300 s, duty cycle = 2%. http://onsemi.com device package shipping ? ordering information NTMS4N01R2 so?8 2500 / tape & ree l ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. so?8 case 751 style 13 marking diagram and pin assignment 1 NTMS4N01R2g so?8 (pb?free) 2500 / tape & ree l e4n01 ayww e4n01 = device code a = assembly location y = year ww = work week = pb?free package (note: microdot may be in either location) single n?channel d s g 4.2 amperes, 20 volts 0.045 @ v gs = 4.5 v 2 n.c. source source gate 3 4 1 7 6 5 8 drain drain drain drain top view
NTMS4N01R2 http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) (note 5) characteristic symbol min typ max unit off characteristics drain?to?source breakdown voltage (v gs = 0 vdc, i d = 250 adc) temperature coefficient (positive) v (br)dss 20 ? ? 20 ? ? vdc mv/ c zero gate voltage drain current (v ds = 12 vdc, v gs = 0 vdc, t j = 25 c) (v ds = 12 vdc, v gs = 0 vdc, t j = 125 c) (v ds = 20 vdc, v gs = 0 vdc, t j = 25 c) i dss ? ? ? ? ? 0.2 1.0 10 ? adc gate?body leakage current (v gs = +10 vdc, v ds = 0 vdc) i gss ? ? 100 nadc gate?body leakage current (v gs = ?10 vdc, v ds = 0 vdc) i gss ? ? ?100 nadc on characteristics gate threshold voltage (v ds = v gs , i d = 250 adc) temperature coefficient (negative) v gs(th) 0.6 ? 0.95 ?3.0 1.2 ? vdc mv/ c static drain?to?source on?state resistance (v gs = 4.5 vdc, i d = 4.2 adc) (v gs = 2.7 vdc, i d = 2.1 adc) (v gs = 2.5 vdc, i d = 2.0 adc) r ds(on) ? ? ? 0.030 0.035 0.037 0.04 0.05 ? forward transconductance (v ds = 2.5 vdc, i d = 2.0 adc) g fs ? 10 ? mhos dynamic characteristics input capacitance (v ds = 10 vdc, v gs = 0 vdc, f = 1.0 mhz) c iss ? 870 1200 pf output capacitance c oss ? 260 400 reverse transfer capacitance c rss ? 60 100 switching characteristics (notes 6 & 7) turn?on delay time (v dd = 12 vdc, i d = 4.2 adc, v gs = 4.5 vdc, r g = 2.3 ) t d(on) ? 13 25 ns rise time t r ? 35 65 turn?off delay time t d(off) ? 45 75 fall time t f ? 50 90 total gate charge (v ds = 12 vdc, v gs = 4.5 vdc, i d = 4.2 adc) q tot ? 11 16 nc gate?source charge q gs ? 2.0 ? gate?drain charge q gd ? 3.0 ? body?drain diode ratings (note 6) diode forward on?voltage (i s = 4.2 adc, v gs = 0 vdc) (i s = 4.2 adc, v gs = 0 vdc, t j = 125 c) v sd ? ? 0.85 0.70 1.1 ? vdc reverse recovery time (i s = 4.2 adc, v gs = 0 vdc, di s /dt = 100 a/ s) t rr ? 20 ? ns t a ? 12 ? t b ? 8.0 ? reverse recovery stored charge q rr ? 0.01 ? c 5. handling precautions to protect against electrostatic discharge is mandatory. 6. indicates pulse test: pulse width = 300 s max, duty cycle = 2%. 7. switching characteristics are independent of operating junction temperature.
NTMS4N01R2 http://onsemi.com 3 2.1 v figure 1. on?region characteristics v ds , drain?to?source voltage (volts) 7 3 2 1 2 1.75 1.5 1.25 1 0.75 0.5 0.25 0 figure 2. transfer characteristics v gs , gate?to?source voltage (volts) 2. 5 2 1.5 1 0.5 8 6 4 2 0 0 figure 3. on?resistance versus gate?to?source voltage v gs , gate?to?source voltage (volts) 0.08 0.05 0.04 0.03 8 6 4 2 0 figure 4. on-resistance versus drain current and gate voltage i d , drain current (amps) 6 4 2 0 0.03 0.02 0.01 0.02 0.05 figure 5. on?resistance variation with temperature t j , junction temperature ( c) 1.6 1.4 1.2 1 0.8 150 125 100 75 50 25 0 ?25 ?50 figure 6. drain?to?source leakage current versus voltage v ds , drain?to?source voltage (volts) 12 10 6 2 1000 100 0.6 10,000 v ds 10 v t j = ?55 c 25 c 100 c i d = 4.2 a t j = 25 c t j = 25 c v gs = 2.5 v v gs = 4.5 v i d = 4.2 a v gs = 4.5 v t j = 125 c v gs = 0 v t j = 150 c t j = 25 c v gs = 1.3 v 1.9 v i d , drain current (amps) 6 5 4 1.5 v 1.7 v 8 v 4.5 v 3.1 v 2.7 v 2.5 v 2.3 v i d , drain current (amps) r ds(on) , drain?to source?resistance ( ) 0.07 0.06 r ds(on) , drain?to source?resistance ( ) 1 0 8 0.04 v gs = 2.7 v r ds(on) , drain?to?source resistance (normalized) i dss , leakage (na) 48 2 0 18 14 16
NTMS4N01R2 http://onsemi.com 4 gate?to?source or drain?to?source voltage (volts) c, capacitance (pf) 500 2000 figure 7. capacitance variation 80 410 6 t j = 25 c c iss c oss c rss 12 0 1000 1500 c iss c rss v gs = 0 v v ds = 0 v v ds v gs 2500 2248 6 figure 8. gate?to?source and drain?to?source voltage versus total charge r g , gate resistance (ohms) 1 10 100 100 10 t, time (ns) v dd = 10 v i d = 4.2 a v gs = 4.5 v t r t d(on) figure 9. resistive switching time variation versus gate resistance 20 v gs , gate?to?source voltage (volt s) 4 0 0 1 0 q g , total gate charge (nc) v ds , drain?to?source voltage (volts) 5 24 i d = 4.2 a t j = 25 c v ds v gs q2 q1 1000 t f 3 2 8 12 416 qt t d(off) r g , gate resistance (ohms) 11010 0 100 10 t, time (ns) v dd = 10 v i d = 2.1 a v gs = 4.5 v t r t d(on) figure 10. resistive switching time variation versus gate resistance 1000 t f t d(off) 6 8 10 12
NTMS4N01R2 http://onsemi.com 5 drain?to?source diode characteristics 0.3 0.4 0.5 0.6 0 1 2 v sd , source?to?drain voltage (volts) figure 11. diode forward voltage versus current 4 v gs = 0 v t j = 25 c 3 0.7 figure 12. maximum rated forward biased safe operating area 0.1 v ds , drain?to?source voltage (volts) 0.01 1 i d , drain current (amps) r ds(on) limit thermal limit package limit v gs = 20 v single pulse t c = 25 c 10 dc 1 100 100 10 10 ms 1.0 ms 100 s 0.8 0.9 i s , source current (amps) 0.1 mounted on 2 sq. fr4 board (1 sq. 2 oz. cu 0.06 thick single sided), 10s max. figure 13. diode reverse recovery waveform di/dt t rr t a t p i s 0.25 i s time i s t b typical electrical characteristics figure 14. thermal response t, time (s) rthja(t), effective transient thermal resistance 1 0.1 0.01 d = 0.5 single pulse 1.0e?05 1.0e?04 1.0e?03 1.0e?02 1.0e?01 1.0e+00 1.0e+01 0.2 0.05 0.01 1.0e+02 1.0e+03 0.001 10 0.0022 0.0210 0.2587 0.7023 0.6863 108.44 f 3.1413 f 0.3517 f 0.0207 f 0.0020 f chip ambient normalized to ja at 10s. 0.1 0.02
NTMS4N01R2 http://onsemi.com 6 package dimensions style 13: pin 1. n.c. 2. source 3. source 4. gate 5. drain 6. drain 7. drain 8. drain seating plane 1 4 5 8 n j x 45 k notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a and b do not include mold protrusion. 4. maximum mold protrusion 0.15 (0.006) per side. 5. dimension d does not include dambar protrusion. allowable dambar protrusion shall be 0.127 (0.005) total in excess of the d dimension at maximum material condition. 6. 751?01 thru 751?06 are obsolete. new standard is 751?07. a b s d h c 0.10 (0.004) dim a min max min max inches 4.80 5.00 0.189 0.197 millimeters b 3.80 4.00 0.150 0.157 c 1.35 1.75 0.053 0.069 d 0.33 0.51 0.013 0.020 g 1.27 bsc 0.050 bsc h 0.10 0.25 0.004 0.010 j 0.19 0.25 0.007 0.010 k 0.40 1.27 0.016 0.050 m 0 8 0 8 n 0.25 0.50 0.010 0.020 s 5.80 6.20 0.228 0.244 ?x? ?y? g m y m 0.25 (0.010) ?z? y m 0.25 (0.010) z s x s m 1.52 0.060 7.0 0.275 0.6 0.024 1.270 0.050 4.0 0.155 mm inches scale 6:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* soic?8 nb case 751?07 issue ag on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 NTMS4N01R2/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
|
